首页 | 本学科首页   官方微博 | 高级检索  
文章检索
  按 检索   检索词:      
出版年份:   被引次数:   他引次数: 提示:输入*表示无穷大
  收费全文   5502篇
  免费   1741篇
  国内免费   507篇
化学   616篇
晶体学   113篇
力学   1254篇
综合类   74篇
数学   489篇
物理学   5204篇
  2024年   5篇
  2023年   48篇
  2022年   96篇
  2021年   82篇
  2020年   155篇
  2019年   120篇
  2018年   118篇
  2017年   166篇
  2016年   200篇
  2015年   171篇
  2014年   400篇
  2013年   370篇
  2012年   350篇
  2011年   493篇
  2010年   400篇
  2009年   463篇
  2008年   483篇
  2007年   454篇
  2006年   447篇
  2005年   358篇
  2004年   355篇
  2003年   276篇
  2002年   265篇
  2001年   260篇
  2000年   209篇
  1999年   149篇
  1998年   140篇
  1997年   127篇
  1996年   90篇
  1995年   95篇
  1994年   66篇
  1993年   73篇
  1992年   55篇
  1991年   45篇
  1990年   39篇
  1989年   30篇
  1988年   20篇
  1987年   18篇
  1986年   10篇
  1985年   11篇
  1984年   8篇
  1983年   6篇
  1982年   4篇
  1981年   5篇
  1980年   4篇
  1979年   5篇
  1978年   1篇
  1976年   3篇
  1974年   2篇
排序方式: 共有7750条查询结果,搜索用时 187 毫秒
991.
This paper investigates the boundary value problem for elastic beam equation of the form
u"(t) = q(t)f(t,u(t)u¢(t),u"(t),u"¢(t)),0 < t < 1,u'(t) = q(t)f(t,u(t)u'(t),u'(t),u'(t)),0 < t < 1,  相似文献   
992.
Lattice recovery of Eu-implanted GaN has been studied by means of Raman scattering under UV excitation. GaN epilayers implanted at 300 keV with doses ranging from 2×1014 to 4×1015 cm−2 and subsequently annealed at 1000 C for 20 min show an increasing degree of disorder as the implantation dose increases. Higher temperature annealings up to 1300 C were also investigated in samples having an AlN capping layer. Disorder related modes, observed in samples annealed at 1000 C, disappear at higher annealing temperatures, indicating an incomplete lattice recovery at 1000 C. The Raman scattering spectra show resonant A1(LO) multiphonon scattering up to sixth order, whose relative intensities depend on the implantation dose. The intensity ratios between multiphonon peaks observed for the highest implantation doses suggest a spread of the resonance, which could be related to a heterogeneous strain distribution, also indicative of incomplete lattice recovery.  相似文献   
993.
Conventional electron-beam lithographic patterning of GaAs substrates followed by reactive-ion etching of small holes has been successfully used to control the nucleation of InAs dots. We have observed >50% single dot occupancy for holes wide and deep and show that the dot occupancy and dot size can be varied by changing the size of the holes. Luminescence from an array of these site-controlled dots has been demonstrated. Thus this use of substrate patterning is a viable technique to controllably place single dots at pre-determined positions in devices.  相似文献   
994.
we present a theoretical study of coincidence imaging and interference with coherent Gaussian beams. The equations for the coincidence image formation and interference fringes are derived, from which it is clear that the imaging is due to the corresponding focusing in the two paths. The quality and visibility of the images and fringes can be high simultaneously. The nature of the coincidence imaging and interference between quantum entangled photon pairs and coherent Gaussian beams are different. The coincidence image with coherent Gaussian beams is due to intensity-intensity correspondence, a classical nature, while that with entangled photon pairs is due to the amplitude correlation a quantum nature. Selected from Acta Sinica Quantum Optica, 2005, 11(4)(in Chinese)  相似文献   
995.
Rotationally resolved ultrahigh-resolution fluorescence excitation spectra of the S1 ← S0 transition of dibenzofuran have been observed using the technique of crossing a collimated molecular beam and the single-mode UV laser beam. 3291 rotational lines of the band and 3047 rotational lines of the band have been assigned. The band has been found to be a b-type transition, in which the transition moment is along the twofold symmetry axis of this molecule, and only the ΔKa = ± 1 transitions were observed. The excited state is identified to be the S11A1(ππ) state. In contrast with this, the band has been found to be an a-type transition in which the transition moment is along the long axis in plane. It indicates that the intensity of this vibronic band arises from vibronic coupling with the S21B2(ππ) state. We determined the accurate rotational constants and the molecule have been shown to be planar both in the ground and excited states.  相似文献   
996.
The University of Hong Kong positron beam employs conventional magnetic field transport to the target, but has a special hybrid lens design around the positron moderator that allows the beam to be focused to millimeter spot sizes at the target. The good focusing capabilities of the beam are made possible by extracting work-function positrons from the moderator in a magnetic field free region using a conventional Soa lens thus minimizing beam canonical angular momentum. An Einzel lens is used to focus the positrons into the magnetic funnel at the end of transportation magnetic field while at the same time bringing up the beam energy to the intermediate value of 7.5 keV. The beam is E × B filtered at this intermediate energy. The final beam energy is obtained by floating the Soa-Einzel system, E × B filter and flight tube, and accelerating the positrons just before the target. External beam steering saddle coils fine tune the position, and the magnetic field around the target chamber is adjusted so as to keep one of the beam foci always on the target. The system is fully computer controlled. Variable energy-Doppler broadened annihilation radiation (VEDBAR) data for a GaN sample are shown which demonstrate the performance of the positron beam system.  相似文献   
997.
Multi-Fractal Formalism for Quasi-Self-Similar Functions   总被引:1,自引:0,他引:1  
The study of multi-fractal functions has proved important in several domains of physics. Some physical phenomena such as fully developed turbulence or diffusion limited aggregates seem to exhibit some sort of self-similarity. The validity of the multi-fractal formalism has been proved to be valid for self-similar functions. But, multi-fractals encountered in physics or image processing are not exactly self-similar. For this reason, we extend the validity of the multi-fractal formalism for a class of some non-self-similar functions. Our functions are written as the superposition of similar structures at different scales, reminiscent of some possible modelization of turbulence or cascade models. Their expressions look also like wavelet decompositions. For the computation of their spectrum of singularities, it is unknown how to construct Gibbs measures. However, it suffices to use measures constructed according the Frostman's method. Besides, we compute the box dimension of the graphs.  相似文献   
998.
The optical torque and the trapping position (focal point) in optical tweezers are analyzed for upward-directed focused laser illumination using a ray optics model, considering that laser light is incident at not only the lower surface but also the side surface of a 3-wing rotor. The viscous drag force due to the pressure and the shearing stress on all surfaces of the rotor is evaluated using computational fluid dynamics. The rotation rate is simulated in water by balancing the optical torque with the drag force, resulting in 500 rpm for an SU-8 rotor with 20 μm diameter at a laser power of 200 mW. The trapping position is estimated to be 7.6 μm in the rotor with an upward-directed laser at 200 mW via an objective lens having a numerical aperture of 1.4. Both the rotation rate and the trapping position agree well with the values obtained in the experiment.  相似文献   
999.
Amorphous gallium nitride (a-GaN) thin films were deposited on glass substrate by electron beam evaporation technique at room temperature and high vacuum using N 2 as carrier gas. The structural properties of the films was studied by X-ray diffraction (XRD) and scanning electron microscope (SEM). It was clear from XRD spectra and SEM study that the GaN thin films were amorphous. The absorbance, transmittance and reflectance spectra of these films were measured in the wavelength range of 300–2200 nm. The absorption coefficient spectral analysis in the sharp absorption region revealed a direct band gap of E g = 3:1 eV. The data analysis allowed the determination of the dispersive optical parameters by calculating the refractive index. The oscillator energy E 0 and the dispersion energy E d, which is a measure of the average strength of inter-band optical transition or the oscillator strength, were determined. Electrical conductivity of a-GaN was measured in a different range of temperatures. Then, activation energy of a-GaN thin films was calculated which equalled E a = 0:434 eV.  相似文献   
1000.
Superconducting deflecting cavities can be used in synchrotron light source to generate subpicosecond X-ray pulses while the impedance of the lower order modes (LOM) and higher order modes (HOM) in the cavity should be kept below an accepted level to avoid beam instability. These modes can be damped by adding waveguide on beam pipe. Detailed simulation of Q in CST Microwave Studio is introduced and experiment results on an aluminum model cavity with damping waveguide are reported to make a comparison.  相似文献   
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号